是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | compliant | 风险等级: | 5.18 |
其他特性: | TUNER | 最大集电极电流 (IC): | 0.05 A |
集电极-发射极最大电压: | 10 V | 配置: | SINGLE |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | NOT APPLICABLE |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最小功率增益 (Gp): | 11 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 7500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFG67T/R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-143 |
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BFG67TRL | NXP |
获取价格 |
暂无描述 |
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BFG67TRL13 | YAGEO |
获取价格 |
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili |
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BFG67W | NXP |
获取价格 |
NPN 8 GHz wideband transistor |
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BFG67W/X | NXP |
获取价格 |
NPN 8 GHz wideband transistor |
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BFG67W/XR | NXP |
获取价格 |
NPN 8 GHz wideband transistor |
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BFG67W/XR-T | NXP |
获取价格 |
TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal |
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BFG67W/X-T | NXP |
获取价格 |
TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal |
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BFG67W-T | NXP |
获取价格 |
TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal |
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BFG67X | ETC |
获取价格 |
NPN 8 GHz wideband transistors |
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