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BFG19 PDF预览

BFG19

更新时间: 2024-02-22 16:28:17
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体放大器晶体管
页数 文件大小 规格书
6页 53K
描述
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

BFG19 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.24外壳连接:COLLECTOR
最大集电极电流 (IC):0.1 A基于收集器的最大容量:1.4 pF
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):30最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):1 W
最小功率增益 (Gp):13 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):5500 MHz
Base Number Matches:1

BFG19 数据手册

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BFG 19S  
NPN Silicon RF Transistor  
• For low noise, low distortion broadband  
amplifiers in antenna and  
telecommunications systems up to 1.5GHz  
at collector currents from 10 mA to 70 mA  
• CECC-type available: CECC 50 002/259  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
BFG 19S  
BFG19S Q62702-F1359  
1 = E 2 = B 3 = E 4 = C SOT-223  
Maximum Ratings  
Parameter  
Symbol  
Values  
15  
Unit  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
V
CEO  
CES  
CBO  
EBO  
20  
20  
3
I
I
100  
12  
mA  
W
C
Base current  
B
Total power dissipation  
P
tot  
T
75 °C  
1
S
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
150  
°C  
j
- 65 ... + 150  
- 65 ... + 150  
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
75  
K/W  
thJS  
1) T is measured on the collector lead at the soldering point to the pcb.  
S
Semiconductor Group  
1
Dec-13-1996  

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