Datasheet > BF988A

BF988A

更新时间： 2024-11-11 23:35:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管射频放大器
页数	文件大小	规格书
8页	163K
描述
TRANSISTOR RF MOSFET

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BF988A 数据手册

BF988

N-Channel Dual Gate MOS-Fieldeffect Tetrode,

Depletion Mode

Electrostatic sensitive device.

Observe precautions for handling.

Applications

Input and mixer stages of VHF- and UHF-tuners.

Features

Integrated gate protection diodes

High cross modulation performance

Low noise figure

High AGC-range

Low feedback capacitance

Low input capacitance

High gain

G₂

G₁

94 9307

96 12647

BF988 Marking: BF988

Plastic case (TO 50)

12623

Drain, 2 Source, 3 Gate 1, 4 Gate 2

Absolute Maximum Ratings

Parameters

Drain source voltage

Symbol

Value

Unit

Drain current

°C

Gate 1/gate 2-source peak current

±I

G1/2SM

Total power dissipation

Channel temperature

amb

≤ 60°C

200

tot

150

Storage temperature range

stg

–55 to +150

°C

Maximum Thermal Resistance

Parameters

Symbol

Value

450

Unit

K/W

Channel ambient on glass fibre printed board

(40 x 25 x 1.5) mm plated with 35 m Cu

thChA

TELEFUNKEN Semiconductors

1 (8)

Rev. A2, 29–Jan–97

12 3 4 5 6 7 8

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