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BF989TRL PDF预览

BF989TRL

更新时间: 2024-11-12 20:58:07
品牌 Logo 应用领域
国巨 - YAGEO /
页数 文件大小 规格书
4页 144K
描述
Small Signal Field-Effect Transistor, 0.03A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BF989TRL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:20 V
最大漏极电流 (ID):0.03 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:DUAL GATE, DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BF989TRL 数据手册

 浏览型号BF989TRL的Datasheet PDF文件第2页浏览型号BF989TRL的Datasheet PDF文件第3页浏览型号BF989TRL的Datasheet PDF文件第4页 

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