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BF988B PDF预览

BF988B

更新时间: 2024-11-12 13:05:55
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 141K
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BF988B 数据手册

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BF988  
Vishay Telefunken  
N–Channel Dual Gate MOS-Fieldeffect Tetrode,  
Depletion Mode  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
Input- and mixer stages especially VHF- and UHF- tuners.  
Features  
Integrated gate protection diodes  
High cross modulation performance  
Low noise figure  
High AGC-range  
Low feedback capacitance  
Low input capacitance  
High gain  
3
G2  
G1  
D
S
4
2
94 9307  
96 12647  
1
BF988 Marking: BF988  
Plastic case (TO 50)  
12623  
1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2  
Absolute Maximum Ratings  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Drain - source voltage  
Drain current  
Gate 1/Gate 2 - source peak current  
Total power dissipation  
Channel temperature  
Test Conditions  
Type  
Symbol  
V
DS  
Value  
12  
30  
10  
200  
150  
Unit  
V
mA  
mA  
mW  
C
I
D
±I  
G1/G2SM  
T
60 C  
P
tot  
amb  
T
Ch  
Storage temperature range  
T
stg  
–55 to +150  
C
Maximum Thermal Resistance  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
R
thChA  
Value  
450  
Unit  
K/W  
3
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm  
plated with 35 m Cu  
Document Number 85007  
Rev. 4, 08-Jul-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (8)  

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