Datasheet > BF2030_07

BF2030_07

更新时间： 2024-10-01 08:52:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	118K
描述
Silicon N-Channel MOSFET Tetrode

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中文翻译

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数据手册

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BF2030_07 数据手册

BF2030...

Silicon N-Channel MOSFET Tetrode

• For low noise, high gain controlled

input stages up to 1GHz

• Operating voltage 5V

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Drain

RF Output

+ DC

AGC

Input

RG1

VGG

GND

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Class 2 (2000V - 4000V) pin to pin Human Body Model

Type

Package

Pin Configuration

Marking

NDs

BF2030

BF2030R

BF2030W

SOT143

1= S

2=D

2=S

3=G2 4=G1

3=G1 4=G2

SOT143R 1= D

SOT343 1= D

NDs

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-source voltage

Continuous drain current

Gate 1/ gate 2-source current

Gate 1 (external biasing)

Total power dissipation

±I

G1/2SM

G1SE

tot

T ≤ 76 °C, BF2030, BF2030R

200

T ≤ 94 °C, BF2030W

°C

Storage temperature

Channel temperature

-55 ... 150

150

stg

¹Pb-containing package may be available upon special request

2007-04-20

12 3 4 5 6 7...11

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