是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT-143 | 包装说明: | SOT-143R, 4 PIN |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.66 |
其他特性: | LOW NOISE | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 10 V |
最大漏极电流 (Abs) (ID): | 0.04 A | 最大漏极电流 (ID): | 0.04 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G4 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DUAL GATE, DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 最小功率增益 (Gp): | 20 dB |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BF2030RE6433 | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
BF2030RE6814HTSA1 | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
BF2030W | INFINEON |
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Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1 | |
BF2030WE6327 | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
BF2030WE6327 | ROCHESTER |
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UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SOT-343, 4 PIN | |
BF2030WE6433 | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
BF2030WH6814XTSA1 | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
BF2040 | INFINEON |
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Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1 | |
BF2040_07 | INFINEON |
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Silicon N-Channel MOSFET Tetrode | |
BF2040E6327 | INFINEON |
获取价格 |
暂无描述 |