Datasheet > BF2040-E6433

BF2040-E6433

更新时间： 2024-10-01 15:28:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	204K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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BF2040-E6433 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	0.04 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	DUAL GATE, ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.2 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

BF2040-E6433 数据手册

BF2040...

Silicon N-Channel MOSFET Tetrode

• For low noise , high gain controlled

input stages up to 1GHz

• Operating voltage 5 V

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Package

SOT143

SOT143R 1=D

SOT343 1=D

Pin Configuration

Marking

NFs

BF2040

BF2040R

BF2040W

1=S

2=D

2=S

3=G2 4=G1

3=G1 4=G2

NFs

Maximum Ratings

Parameter

Drain-source voltage

Symbol

Value

Unit

Continuous drain current

Gate 1/ gate 2-source current

Gate 1 (external biasing)

Total power dissipation

±I

G1/2SM

G1SE

tot

T ≤ 76 °C, BF2040, BF2040R

200

T ≤ 94 °C, BF2040W

°C

Storage temperature

Channel temperature

-55 ... 150

150

stg

Thermal Resistance

Parameter

Channel - soldering point

Symbol

thchs

Value

Unit

K/W

BF2040, BF2040R

BF2040W

≤ 370

≤ 280

For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-06-01

12 3 4 5 6 7...11

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