Datasheet > BF2040WH6814XTSA1

BF2040WH6814XTSA1

更新时间： 2024-10-02 03:38:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	204K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-343, 4 PIN

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替代型号

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BF2040WH6814XTSA1 数据手册

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BF2040...

Silicon N-Channel MOSFET Tetrode

• For low noise , high gain controlled

input stages up to 1GHz

• Operating voltage 5 V

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Package

SOT143

SOT143R 1=D

SOT343 1=D

Pin Configuration

Marking

NFs

BF2040

BF2040R

BF2040W

1=S

2=D

2=S

3=G2 4=G1

3=G1 4=G2

NFs

Maximum Ratings

Parameter

Drain-source voltage

Symbol

Value

Unit

Continuous drain current

Gate 1/ gate 2-source current

Gate 1 (external biasing)

Total power dissipation

±I

G1/2SM

G1SE

tot

T ≤ 76 °C, BF2040, BF2040R

200

T ≤ 94 °C, BF2040W

°C

Storage temperature

Channel temperature

-55 ... 150

150

stg

Thermal Resistance

Parameter

Channel - soldering point

Symbol

thchs

Value

Unit

K/W

BF2040, BF2040R

BF2040W

≤ 370

≤ 280

For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-06-01

12 3 4 5 6 7...11

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BF2040WH6814XTSA1 替代型号

型号	品牌	替代类型	描述	数据表
BF5020WH6327XTSA1	INFINEON	类似代替	RF Small Signal Field-Effect Transistor
BF2030WH6814XTSA1	INFINEON	类似代替	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-

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