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BF2040_07 PDF预览

BF2040_07

更新时间: 2024-10-01 08:52:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 205K
描述
Silicon N-Channel MOSFET Tetrode

BF2040_07 数据手册

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BF2040...  
Silicon N-Channel MOSFET Tetrode  
For low noise , high gain controlled  
input stages up to 1GHz  
Operating voltage 5 V  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Package  
SOT143  
SOT143R 1=D  
SOT343 1=D  
Pin Configuration  
Marking  
NFs  
NFs  
BF2040  
BF2040R  
BF2040W  
1=S  
2=D  
2=S  
2=S  
3=G2 4=G1  
3=G1 4=G2  
3=G1 4=G2  
-
-
-
-
-
-
NFs  
Maximum Ratings  
Parameter  
Drain-source voltage  
Symbol  
V
DS  
Value  
8
Unit  
V
40  
10  
7
mA  
Continuous drain current  
Gate 1/ gate 2-source current  
Gate 1 (external biasing)  
Total power dissipation  
I
D
±I  
G1/2SM  
V
mW  
+V  
G1SE  
P
tot  
T 76 °C, BF2040, BF2040R  
200  
200  
S
T 94 °C, BF2040W  
S
°C  
Storage temperature  
Channel temperature  
T
T
-55 ... 150  
150  
stg  
ch  
Thermal Resistance  
Parameter  
Channel - soldering point  
Symbol  
R
thchs  
Value  
Unit  
K/W  
1)  
BF2040, BF2040R  
BF2040W  
370  
280  
1
For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-06-01  
1

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