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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| BF203 | ETC |
获取价格 |
FUSE BLOCK CARTRIDGE CHASSIS MNT |
|
| BF2030 | INFINEON |
获取价格 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1 |
|
| BF2030_07 | INFINEON |
获取价格 |
Silicon N-Channel MOSFET Tetrode |
|
| BF2030E6327 | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |
|
| BF2030E6433 | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |
|
| BF2030E6814HTSA1 | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |
|
| BF2030R | INFINEON |
获取价格 |
Silicon N-Channel MOSFET Tetrode |
|
| BF2030RE6327 | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |
|
| BF2030RE6433 | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |
|
| BF2030RE6814HTSA1 | INFINEON |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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