Datasheet > BDX65B

BDX65B

更新时间： 2025-07-26 06:41:59

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	111K
描述
Silicon NPN Power Transistors

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BDX65B 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BDX65B

DESCRIPTION

·With TO-3 package

·DARLINGTON

·Complement to type BDX64B

APPLICATIONS

·Designed for power amplification and

switching applications.

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

120

UNIT

Open base

100

Open collector

I_CM

Collector current(peak)

Base current

I_B

0.2

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

117

ꢀ

T_j

-55~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.5

ꢀ/W

12 3

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