Datasheet > BDX65_12

BDX65_12

更新时间： 2024-02-26 14:05:03

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
4页	82K
描述
NPN SILICON DARLINGTON POWER TRANSISTOR

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数据手册

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BDX65_12 数据手册

BDX65 – A – B – C

NPN SILICON DARLINGTON POWER TRANSISTOR

The BDX65, BDX65A, BDX65 and BDX65C are mounted in TO-3 metal package.

High current power darlingtons designed for power amplification and switching applications.

The complementary PNP are BDX64, BDX64A, BDX64B, BDX64C.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CEO

Ratings

Value

Unit

BDX65

100

120

100

120

140

5.0

BDX65A

BDX65B

BDX65C

BDX65

BDX65A

BDX65B

BDX65C

Collector-Emitter Voltage

Collector-BaseVoltage

V_CBO

V_EBO

I_C

Emitter-Base Voltage

Collector Current

I_C(RMS)

I_CM

I_B

Base Current

0.2

117

P_T

T_J

T_S

Power Dissipation

Junction Temperature

Storage Temperature

@ T_C= 25°

-55 to +200

°C

THERMAL CHARACTERISTICS

Symbol

R_thJ-C

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.5

°C/W

24/10/2012

COMSET SEMICONDUCTORS

1 | 4

12 3 4

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与BDX65_12相关器件

型号	品牌	获取价格	描述	数据表
BDX65A	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
BDX65A	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
BDX65A	COMSET	获取价格	NPN SILICON DARLINGTONS
BDX65B	SEME-LAB	获取价格	Bipolar NPN Device
BDX65B	COMSET	获取价格	NPN SILICON DARLINGTONS
BDX65B	SAVANTIC	获取价格	Silicon NPN Power Transistors
BDX65B	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
BDX65C	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
BDX65C	COMSET	获取价格	NPN SILICON DARLINGTONS
BDX65C	SAVANTIC	获取价格	Silicon NPN Power Transistors