Datasheet > BDX66B

BDX66B

更新时间： 2024-09-23 08:52:07

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	109K
描述
Silicon PNP Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BDX66B 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

BDX66B

DESCRIPTION

·With TO-3 package

·High current

·DARLINGTON

APPLICATIONS

·Designed for power amplification and

switching applications.

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-100

UNIT

Open base

-100

Open collector

-5

-16

I_CM

Collector current(peak)

Base current

-20

I_B

-0.25

150

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

ꢀ

T_j

-55~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.17

ꢀ/W

12 3

中文翻译

下载PDF

与BDX66B相关器件

型号	品牌	获取价格	描述	数据表
BDX66C	COMSET	获取价格	PNP SILICON DARLINGTONS
BDX66C	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
BDX66C	SAVANTIC	获取价格	Silicon PNP Power Transistors
BDX66C	ISC	获取价格	isc Silicon PNP Darlington Power Transistor
BDX67	SEME-LAB	获取价格	NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
BDX67	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
BDX67	COMSET	获取价格	NPN SILICON DARLINGTONS
BDX67	SAVANTIC	获取价格	Silicon NPN Power Transistors
BDX67_1	COMSET	获取价格	NPN SILICON DARLINGTONS
BDX67_12	COMSET	获取价格	NPN SILICON DARLINGTON POWER TRANSISTOR