Datasheet > BDX64C

BDX64C

更新时间： 2025-07-26 06:41:59

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	111K
描述
Silicon PNP Power Transistors

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BDX64C 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

BDX64C

DESCRIPTION

·With TO-3 package

·DARLINGTON

·Complement to type BDX65C

APPLICATIONS

·Designed for power amplification and

switching applications.

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-120

-5

UNIT

Open base

Open collector

-12

I_CM

Collector current(peak)

Base current

-16

I_B

-0.2

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

117

ꢀ

T_j

-55~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.5

ꢀ/W

12 3

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与BDX64C相关器件

型号	品牌	获取价格	描述	数据表
BDX64_12	COMSET	获取价格	PNP SILICON DARLINGTON POWER TRANSISTOR
BDX65	SEME-LAB	获取价格	Bipolar NPN Device
BDX65	SAVANTIC	获取价格	Silicon NPN Power Transistors
BDX65	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
BDX65	COMSET	获取价格	NPN SILICON DARLINGTONS
BDX65	DIGITRON	获取价格	Polarity : NPN; Type : Darlington; Power Dissipation : 117; Maximum Collector Current : 12
BDX65	NJSEMI	获取价格	Darlington BJT
BDX65A	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
BDX65A	COMSET	获取价格	NPN SILICON DARLINGTONS
BDX65A	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3