Datasheet > BDT60B

BDT60B

更新时间： 2024-02-14 01:02:21

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描述
PNP SILICON POWER DARLINGTONS

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中文翻译

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技术参数
数据手册

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BDT60B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	4 A
配置：	DARLINGTON	最小直流电流增益 (hFE)：	750
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	17 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	标称过渡频率 (fT)：	10 MHz

BDT60B 数据手册

BDT60, BDT60A, BDT60B, BDT60C

PNP SILICON POWER DARLINGTONS

AUGUST 1993 - REVISED MARCH 1997

●

Designed for Complementary Use with

BDT61, BDT61A, BDT61B and BDT61C

TO-220 PACKAGE

(TOP VIEW)

●

50 W at 25°C Case Temperature

4 A Continuous Collector Current

Minimum h of 750 at 1.5 V, 3 A

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BDT60

-60

BDT60A

BDT60B

BDT60C

BDT60

-80

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

-100

-120

-60

BDT60A

BDT60B

BDT60C

-80

V_CEO

-100

-120

Emitter-base voltage

V_EBO

I_C

-5

Continuous collector current

Continuous base current

-4

-0.1

I_B

Continuous device dissipation at (or below) 25°C case temperature (see Note 1)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)

Operating junction temperature range

P_tot

T_j

°C

-65 to +150

Storage temperature range

T_stg

T_A

Operating free-air temperature range

NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.

2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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