Datasheet > BDT62

BDT62

更新时间： 2024-09-25 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	236K
描述
Silicon PNP Darlington Power Transistors

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中文翻译

获取价格

技术参数
数据手册

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BDT62 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

BDT62 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistors

BDT62/A/B/C

DESCRIPTION

·DC Current Gain -h_FE= 1000(Min)@ I_C= -3A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -60V(Min)- BDT62; -80V(Min)- BDT62A;

-100V(Min)- BDT62B; -120V(Min)- BDT62C

·Complement to Type BDT63/A/B/C

APPLICATIONS

·Designed for use in audio amplifier output stages , general

purpose amplifier and high speed switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-60

UNIT

BDT62

BDT62A

BDT62B

BDT62C

BDT62

-80

Collector-Base

Voltage

V_CBO

-100

-120

-60

BDT62A

BDT62B

BDT62C

-80

Collector-Emitter

Voltage

V_CEO

-100

-120

-5

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

-10

-15

-0.25

Collector Power Dissipation

P_C

T_j

℃

T_C=25℃

Junction Temperature

150

Storage Ttemperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.39

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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与BDT62相关器件

型号	品牌	获取价格	描述	数据表
BDT62A	ISC	获取价格	Silicon PNP Darlington Power Transistors
BDT62A	NJSEMI	获取价格	Trans Darlington PNP 80V 10A
BDT62A-SM	ETC	获取价格	TRANSISTOR DARLINGTON
BDT62B	ISC	获取价格	Silicon PNP Darlington Power Transistors
BDT62B	NJSEMI	获取价格	Trans Darlington PNP 100V 10A
BDT62C	ISC	获取价格	Silicon PNP Darlington Power Transistors
BDT62C	NJSEMI	获取价格	Trans Darlington PNP 120V 10A
BDT62C-SM	ETC	获取价格	TRANSISTOR DARLINGTON
BDT63	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
BDT63	COMSET	获取价格	SILICON DARLINGTON POWER TRANSISTORS