BDT61B-S

更新时间： 2024-09-25 13:05:55

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伯恩斯 - BOURNS		晶体晶体管功率双极晶体管开关局域网
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BDT61B-S 数据手册

BDT61, BDT61A, BDT61B, BDT61C

NPN SILICON POWER DARLINGTONS

●

Designed for Complementary Use with

BDT60, BDT60A, BDT60B and BDT60C

TO-220 PACKAGE

(TOP VIEW)

●

50 W at 25°C Case Temperature

4 A Continuous Collector Current

Minimum h of 750 at 1.5V, 3 A

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BDT61

BDT61A

BDT61B

BDT61C

BDT61

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

100

120

BDT61A

BDT61B

BDT61C

V_CEO

100

120

Emitter-base voltage

V_EBO

I_C

Continuous collector current

Continuous base current

0.1

I_B

Continuous device dissipation at (or below) 25°C case temperature (see Note 1)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)

Operating junction temperature range

P_tot

T_j

°C

-65 to +150

Storage temperature range

T_stg

T_A

Operating free-air temperature range

NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.

2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

AUGUST 1993 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

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BDT61B-S 替代型号

型号	品牌	替代类型	描述	数据表
BDW53B-S	BOURNS	类似代替	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
D44H8G	ONSEMI	功能相似	Complementary Silicon Power Transistors

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