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BDT63A PDF预览

BDT63A

更新时间: 2024-02-20 08:32:05
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
5页 111K
描述
SILICON DARLINGTON POWER TRANSISTORS

BDT63A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.69最大集电极电流 (IC):10 A
配置:DARLINGTON最小直流电流增益 (hFE):1000
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):21 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):10 MHz
Base Number Matches:1

BDT63A 数据手册

 浏览型号BDT63A的Datasheet PDF文件第2页浏览型号BDT63A的Datasheet PDF文件第3页浏览型号BDT63A的Datasheet PDF文件第4页浏览型号BDT63A的Datasheet PDF文件第5页 
BDT63-A-B-C  
SILICON DARLINGTON POWER TRANSISTORS  
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220  
envelope. They are intended for output stages in audio equipment, general amplifiers, and  
analogue switching application.  
PNP complements are BDT62-A-B-C  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
BDT63  
60  
80  
100  
120  
60  
BDT63A  
BDT63B  
BDT63C  
BDT63  
Collector-Base Voltage  
Collector-Emitter Voltage  
VCBO  
V
BDT63A  
BDT63B  
BDT63C  
80  
100  
120  
VCEO  
V
V
BDT63  
BDT63A  
Emitter-Base Voltage  
Collector Current  
VEBO  
5
BDT63B  
BDT63C  
BDT63  
BDT63A  
10  
15  
IC  
A
A
BDT63B  
BDT63C  
BDT63  
BDT63A  
Collector Peak Current  
ICM  
BDT63B  
BDT63C  
26/09/2012  
COMSET SEMICONDUCTORS  
1 | 5  

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