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D44H8G PDF预览

D44H8G

更新时间： 2024-11-04 09:52:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
5页 82K
描述
Complementary Silicon Power Transistors

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中文翻译

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D44H8G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.75
Factory Lead Time：1 week风险等级：0.87
其他特性：LEADFORM OPTIONS ARE AVAILABLE外壳连接：COLLECTOR
最大集电极电流 (IC)：10 A集电极-发射极最大电压：60 V
配置：SINGLE最小直流电流增益 (hFE)：40
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：50 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：50 MHz
Base Number Matches：1

D44H8G 数据手册

 浏览型号D44H8G的Datasheet PDF文件第2页浏览型号D44H8G的Datasheet PDF文件第3页浏览型号D44H8G的Datasheet PDF文件第4页浏览型号D44H8G的Datasheet PDF文件第5页 
D44H Series (NPN),  
D45H Series (PNP)  
Preferred Devices  
Complementary Silicon  
Power Transistors  
These series of plastic, silicon NPN and PNP power transistors can  
be used as ꢀgeneral purpose power amplification and switching such  
as output or driver stages in applications such as switching regulators,  
converters and power amplifiers.  
http://onsemi.com  
10 AMP COMPLEMENTARY  
SILICON POWER  
Features  
•ꢁLow Collector-Emitter Saturation Voltage  
TRANSISTORS 60, 80 VOLTS  
V
CE(sat)  
= 1.0 V (Max) @ 8.0 A  
•ꢁFast Switching Speeds  
•ꢁComplementary Pairs Simplifies Designs  
•ꢁPb-Free Packages are Available*  
MARKING  
DIAGRAM  
4
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
TO-220AB  
CASE 221A-09  
STYLE 1  
D4xHyyG  
AYWW  
Collector-Emitter Voltage  
D44H8, D45H8  
D44H11, D45H11  
V
CEO  
Vdc  
60  
80  
1
2
3
Emitter Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
D4xHyy = Device Code  
x = 4 or 5  
yy = 8 or 11  
Collector Current  
- Continuous  
- Peak (Note 1)  
I
C
10  
20  
A
= Assembly Location  
= Year  
= Work Week  
Y
Total Power Dissipation  
@ T = 25°C  
P
D
W
WW  
G
70  
2.0  
C
= Pb-Free Package  
@ T = 25°C  
A
Operating and Storage Junction  
Temperature Range  
T , T  
J
-55 to +150  
°C  
stg  
ORDERING INFORMATION  
†
50 Units/Rail  
50 Units/Rail  
THERMAL CHARACTERISTICS  
Characteristic  
Device  
Package  
Shipping  
Symbol  
Max  
1.8  
Unit  
°C/W  
°C/W  
°C  
D44H8  
TO-220  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
R
q
JC  
D44H8G  
TO-220  
(Pb-Free)  
R
q
JA  
62.5  
275  
D44H11  
TO-220  
50 Units/Rail  
50 Units/Rail  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
D44H11G  
TO-220  
(Pb-Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.  
D45H8  
TO-220  
50 Units/Rail  
50 Units/Rail  
D45H8G  
TO-220  
(Pb-Free)  
D45H11  
TO-220  
50 Units/Rail  
50 Units/Rail  
D45H11G  
TO-220  
(Pb-Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 10  
1
Publication Order Number:  
D44H/D  
 
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中文翻译

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D44H8G 替代型号

型号 品牌 替代类型 描述 数据表
D44H8 ONSEMI

类似代替

 COMPLEMENTARY SILICON POWER TRANSISTORS
D44H8 FAIRCHILD

功能相似

 NPN Power Amplifier
D44H8 STMICROELECTRONICS

功能相似

 NPN SILICON POWER TRANSISTORS

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D44H8L MOTOROLA

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D44H8N MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H8S MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H8T MOTOROLA

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 		10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44H8U MOTOROLA

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 		10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44H8U2 MOTOROLA

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 		10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
D44H8UA MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
D44H8W MOTOROLA

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 		10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB

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