Datasheet > BDT63

BDT63

更新时间： 2024-09-26 08:51:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	119K
描述
isc Silicon NPN Darlington Power Transistor

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BDT63 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

BDT63/A/B/C

DESCRIPTION

·Collector Current -I_C= 10A

·High DC Current Gain-h_FE= 1000(Min)@ I_C= 3A

·Complement to Type BDT62/A/B/C

APPLICATIONS

·Designed for audio output stages and general purpose

amplifier applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDT63

BDT63A

BDT63B

BDT63C

BDT63

Collector-Emitter

Voltage

V_CER

100

120

BDT63A

BDT63B

BDT63C

Collector-Emitter

Voltage

V_CEO

100

120

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

0.25

Collector Power Dissipation

P_C

T_J

℃

@ T_C=25℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.39

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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与BDT63相关器件

型号	品牌	获取价格	描述	数据表
BDT63A	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
BDT63A	COMSET	获取价格	SILICON DARLINGTON POWER TRANSISTORS
BDT63AF	PHILIPS	获取价格	Transistor,
BDT63A-SM	ETC	获取价格	TRANSISTOR DARLINGTON
BDT63B	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
BDT63B	COMSET	获取价格	SILICON DARLINGTON POWER TRANSISTORS
BDT63B	NJSEMI	获取价格	Darlington BJT
BDT63C	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
BDT63C	COMSET	获取价格	SILICON DARLINGTON POWER TRANSISTORS
BDT63C	NJSEMI	获取价格	Darlington BJT