BDT61

更新时间： 2024-09-25 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	235K
描述
Silicon NPN Darlington Power Transistors

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BDT61 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistors

BDT61/A/B/C

DESCRIPTION

·DC Current Gain -h_FE= 750(Min)@ I_C= 1.5A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 60V(Min)- BDT61; 80V(Min)- BDT61A;

100V(Min)- BDT61B; 120V(Min)- BDT61C

·Complement to Type BDT60/A/B/C

APPLICATIONS

·Designed for use in audio amplifier output stages , general

purpose amplifier and high speed switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDT61

BDT61A

BDT61B

BDT61C

BDT61

Collector-Base

Voltage

V_CBO

100

120

BDT61A

BDT61B

BDT61C

Collector-Emitter

Voltage

V_CEO

100

120

V_EBO

I_C

Emitter-Base Voltage

Collector Current-Continuous

Base Current

I_B

0.1

Collector Power Dissipation

T_a=25℃

Collector Power Dissipation

T_C=25℃

P_C

T_j

Junction Temperature

150

-65~150

℃

Storage Ttemperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

2.5

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

62.5

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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与BDT61相关器件

型号	品牌	获取价格	描述	数据表
BDT61A	ISC	获取价格	Silicon NPN Darlington Power Transistors
BDT61A	POINN	获取价格	NPN SILICON POWER DARLINGTONS
BDT61A	BOURNS	获取价格	NPN SILICON POWER DARLINGTONS
BDT61AF	PHILIPS	获取价格	Transistor,
BDT61A-S	BOURNS	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BDT61B	ISC	获取价格	Silicon NPN Darlington Power Transistors
BDT61B	BOURNS	获取价格	NPN SILICON POWER DARLINGTONS
BDT61B	POINN	获取价格	NPN SILICON POWER DARLINGTONS
BDT61B-S	BOURNS	获取价格	暂无描述
BDT61C	POINN	获取价格	NPN SILICON POWER DARLINGTONS