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BD677AG PDF预览

BD677AG

更新时间: 2024-11-05 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网放大器PC晶体管功率双极晶体管
页数 文件大小 规格书
4页 115K
描述
中等功率 NPN 达林顿双极功率晶体管

BD677AG 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-225AA包装说明:ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.58Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:224513
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-225 CASE 77-09
Samacsys Released Date:2015-11-03 12:30:39Is Samacsys:N
最大集电极电流 (IC):4 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):750
JEDEC-95代码:TO-225AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BD677AG 数据手册

 浏览型号BD677AG的Datasheet PDF文件第2页浏览型号BD677AG的Datasheet PDF文件第3页浏览型号BD677AG的Datasheet PDF文件第4页 
Order this document  
by BD675/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for use as output devices in complementary general–purpose amplifier applica-  
tions.  
High DC Current Gain —  
= 750 (Min) @ I = 1.5 and 2.0 Adc  
Monolithic Construction  
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A,  
678, 678A, 680, 680A, 682  
h
FE  
C
*Motorola Preferred Device  
BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803  
4.0 AMPERE  
DARLINGTON  
POWER TRANSISTORS  
NPN SILICON  
MAXIMUM RATINGS  
BD675  
BD677  
BD679  
BD675A BD677A BD679A  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
Symbol  
BD681  
100  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
60, 80, 100 VOLTS  
40 WATTS  
V
CEO  
45  
45  
60  
60  
80  
80  
V
100  
CB  
EB  
V
5.0  
4.0  
0.1  
I
C
Base Current  
I
B
Total Device Dissipation  
P
D
@T = 25 C  
40  
0.32  
Watts  
W/ C  
C
Derate above 25 C  
Operating and Storage Junction T , T  
stg  
55 to +150  
C
J
Temperating Range  
CASE 77–08  
TO–225AA TYPE  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
3.13  
C/W  
JC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5.0  
0
15  
30  
45  
60  
75  
90  
105 120 135 150  
C)  
165  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power Temperature Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995

BD677AG 替代型号

型号 品牌 替代类型 描述 数据表
BD677G ONSEMI

类似代替

中等功率 NPN 达林顿双极功率晶体管
BD675G ONSEMI

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Plastic Medium−Power Silicon NPN Darlingtons
BD675AG ONSEMI

类似代替

Plastic Medium−Power Silicon NPN Darlingtons

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BD677ASTU FAIRCHILD

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