Datasheet > BD645

BD645

更新时间： 2024-09-14 22:39:31

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NPN SILICON POWER DARLINGTONS

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BD645 数据手册

BD645, BD647, BD649, BD651

NPN SILICON POWER DARLINGTONS

MAY 1993 - REVISED MARCH 1997

●

Designed for Complementary Use with

BD646, BD648, BD650 and BD652

TO-220 PACKAGE

(TOP VIEW)

●

62.5 W at 25°C Case Temperature

8 A Continuous Collector Current

Minimum h of 750 at 3 V, 3 A

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD645

BD647

BD649

BD651

BD645

BD647

BD649

BD651

100

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

120

140

V_CEO

100

120

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

0.3

62.5

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

260

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 5 mA, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= 20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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