Datasheet > BD646

BD646

更新时间： 2024-09-25 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	108K
描述
isc Silicon PNP Darlington Power Transistor

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中文翻译

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技术参数
数据手册

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BD646 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

BD646 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BD646

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -60V(Min)

·High DC Current Gain

: h_FE= 750(Min) @I_C= -3A

·Low Saturation Voltage

·Complement to Type BD645

APPLICATIONS

·Designed for use as complementary AF push-pull output

stage applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-80

UNIT

-60

-5

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

-8

I_CP

-12

I_B

-0.3

Collector Power Dissipation

@ T_a=25℃

P_C

Collector Power Dissipation

@ T_C=25℃

62.5

150

-65~150

T_J

Junction Temperature

℃

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

62.5

R_{th j-a}

isc Website：www.iscsemi.cn

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