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BD63001AMUV-E2 PDF预览

BD63001AMUV-E2

更新时间: 2024-02-21 15:33:33
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罗姆 - ROHM /
页数 文件大小 规格书
26页 2110K
描述
Three-Phase Brushless Motor Predriver

BD63001AMUV-E2 数据手册

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Datasheet  
Three-Phase Brushless Motor Predriver  
BD63001AMUV  
General Description  
Key Specifications  
BD63001AMUV is a Three-Phase Brushless Motor  
Predriver that uses upper Pch and lower Nch MOS  
transistor for an external output power transistor. It  
generates a driving signal from the Hall sensor and  
drives PWM through the input control signal. In addition,  
the supply voltage that can be applied is 12V or 24V, it  
has various controls and built-in protection functions,  
making it useful for a variety of purposes. Since the IC  
adopts small packages, it can be used on small diameter  
motors.  
Power Supply Voltage Rating:  
Operating temperature range:  
3 3 V  
-40°C to +85°C  
Predriver Output Current Rating(Continuous) : ±30mA  
Predriver Output Current Rating(Peak) (Note 1) : ±200mA  
The Current Limit Detect Voltage:  
UVLO Lockout Voltage:  
(Note1) tw≤1µs, 50kHz  
0.2V±10%  
3.7V(Typ)  
Package  
W(Typ) x D(Typ) x H(Max)  
Features  
Built-in 120° Commutation Logic Circuit  
Drives Upper Pch, Lower Nch MOS transistor  
PWM control system /DC control system  
CW/CCW Function  
FG Output (1FG Output)  
Current Limit Protection Circuit (CL)  
Overheat Protection Circuit (TSD)  
Under Voltage Protection Circuit (UVLO)  
Over Voltage Protection Circuit (OVLO)  
Motor Lock Protection (MLP)  
VQFN024V4040  
4.00mm x 4.00mm x 1.00mm  
Application  
OA apparatus  
Other general public welfare apparatus  
Typical Application Circuits  
VCC=24V  
VM  
0.1µF  
VCC  
C1  
R3  
1
Q1  
R1  
R2  
UH  
UL  
8
7
VREG  
19  
R4  
C2  
0.1µF  
R5  
HUP  
13  
14  
15  
16  
C1  
HU  
HV  
0.01µF  
0.01µF  
0.01µF  
R3  
Q1  
HUN  
R1  
R2  
VH  
VL  
HVP  
HVN  
10  
9
M
R4  
C2  
3  
HWP  
HWN  
R5  
17  
18  
HW  
C1  
R3  
Q1  
R1  
R2  
WH  
WL  
12  
11  
R4  
C2  
CW  
2
3
R5  
HLSW  
BRKB  
24  
6
RCL  
C2  
R6  
PWMB  
DCIN  
Rref  
22  
21  
VREG  
10k  
FGO  
23  
PWM  
OSC20  
20k  
LPE  
4
5
GND  
Figure 1. Application Circuit in HLSW=OPEN ("H")  
Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays  
www.rohm.com  
TSZ02201-0P1P0B001390-1-2  
30.May.2016 Rev.002  
© 2016 ROHM Co., Ltd. All rights reserved.  
1/22  
TSZ2211114001  
 
 
 
 
 
 

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