3-phase brushless motor
pre-driver
BD63002MUV
●General Description
●Key Specifications
BD63002MUV is pre-driver of 3-phase brushless motor.
It generates a driving signal from the Hall sensor and
drives PWM through the input control signal. Since there
is a built-in booster circuit, Nch-Nch MOS transistors can
be used on the external power transistor. In addition, the
power supply can use 12V or 24V and it has various
controls and protection functions built-in, making it useful
for a variety of purposes. Because it adopts small
packages, it can also be used on small diameter motors.
Power supply voltage rating:
Operating temperature range:
Stand-by current:
Range of in-phase input voltage
for hall input:
Current limit detect voltage:
UVLO Lock out voltage:
OVLO Lock out voltage 1:
OVLO Lock out voltage 2:
30V
-40°C to +85°C
1.2mA(Max.)
VREG-1.7V(Max.)
0.2V±10%
6.0V(Typ.)
16.0V(Typ.)
28.5V(Typ.)
●Features
●Package
VQFN028V5050
W(Typ) x D(Typ) x H(Max)
5.00mm x 5.00mm x 1.00mm
Built-in 120° commutation logic circuit.
Driving with Nch-Nch MOS transistors.
PWM control mode (low side arm switching).
Built-in power-saving circuit.
CW/CCW function.
Short brake function.
FG output (Open drain).
Built-in protection circuit for current limiting,
overheating, under voltage, over voltage, motor lock.
●Applications
OA machines.
Other general civil equipments.
VQFN028V5050
●Typical Application Circuit
0.1µF
47µF
0.1µF
VG
VCC
28
27
CP2
CP1
26
25
8
VREG
0.1µF
23
0.1µF
UH
UL
VH
0.1µF
0.1µF
0.1µF
6
HUP
17
HU
HV
0.01µF
0.01µF
0.01µF
HUN
9
18
19
20
21
22
VL
M
11
14
12
7
HVP
HVN
WH
WL
HWP
HWN
U
V
HW
200Ω
10
13
200Ω
200Ω
W
RCL
ENB
CW
4
3
5
2
15
1
0.1Ω
10kΩ
FG
BRKB
PWMB
LPE
24
16
GND
Figure 1. Application circuit
○Product structure:Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays
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TSZ22111・14・001
3.Jul.2015 Rev.002