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BD63002MUV PDF预览

BD63002MUV

更新时间: 2024-02-04 16:54:40
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
24页 982K
描述
3-phase brushless motor pre-driver

BD63002MUV 数据手册

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3-phase brushless motor  
pre-driver  
BD63002MUV  
General Description  
Key Specifications  
BD63002MUV is pre-driver of 3-phase brushless motor.  
It generates a driving signal from the Hall sensor and  
drives PWM through the input control signal. Since there  
is a built-in booster circuit, Nch-Nch MOS transistors can  
be used on the external power transistor. In addition, the  
power supply can use 12V or 24V and it has various  
controls and protection functions built-in, making it useful  
for a variety of purposes. Because it adopts small  
packages, it can also be used on small diameter motors.  
Power supply voltage rating:  
Operating temperature range:  
Stand-by current:  
Range of in-phase input voltage  
for hall input:  
Current limit detect voltage:  
UVLO Lock out voltage:  
OVLO Lock out voltage 1:  
OVLO Lock out voltage 2:  
30V  
-40°C to +85°C  
1.2mA(Max.)  
VREG-1.7V(Max.)  
0.2V±10%  
6.0V(Typ.)  
16.0V(Typ.)  
28.5V(Typ.)  
Features  
Package  
VQFN028V5050  
W(Typ) x D(Typ) x H(Max)  
5.00mm x 5.00mm x 1.00mm  
Built-in 120° commutation logic circuit.  
Driving with Nch-Nch MOS transistors.  
PWM control mode (low side arm switching).  
Built-in power-saving circuit.  
CW/CCW function.  
Short brake function.  
FG output (Open drain).  
Built-in protection circuit for current limiting,  
overheating, under voltage, over voltage, motor lock.  
Applications  
OA machines.  
Other general civil equipments.  
VQFN028V5050  
Typical Application Circuit  
0.1µF  
47µF  
0.1µF  
VG  
VCC  
28  
27  
CP2  
CP1  
26  
25  
8
VREG  
0.1µF  
23  
0.1µF  
UH  
UL  
VH  
0.1µF  
0.1µF  
0.1µF  
6
HUP  
17  
HU  
HV  
0.01µF  
0.01µF  
0.01µF  
HUN  
9
18  
19  
20  
21  
22  
VL  
M
11  
14  
12  
7
HVP  
HVN  
WH  
WL  
HWP  
HWN  
U
V
HW  
200Ω  
10  
13  
200Ω  
200Ω  
W
RCL  
ENB  
CW  
4
3
5
2
15  
1
0.1Ω  
10kΩ  
FG  
BRKB  
PWMB  
LPE  
24  
16  
GND  
Figure 1. Application circuit  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays  
.www.rohm.co  
TSZ02201-0P2P0B000840-1-2  
© 2015 ROHM Co., Ltd. All rights reserved.  
1/20  
TSZ2211114001  
3.Jul.2015 Rev.002  

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