Datasheet > BD243B

BD243B

更新时间： 2024-11-25 22:48:19

品牌	Logo	应用领域
POINN		晶体晶体管
页数	文件大小	规格书
6页	89K
描述
NPN SILICON POWER TRANSISTORS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BD243B 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.83
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	6 A
集电极-发射极最大电压：	80 V	配置：	SINGLE
最小直流电流增益 (hFE)：	15	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

BD243B 数据手册

BD243, BD243A, BD243B, BD243C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD244 Series

TO-220 PACKAGE

(TOP VIEW)

●

65 W at 25°C Case Temperature

6 A Continuous Collector Current

10 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD243

BD243A

BD243B

BD243C

BD243

Collector-emitter voltage (R_BE= 100 W)

V_CER

115

BD243A

BD243B

BD243C

Collector-emitter voltage (I_C= 30 mA)

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

62.5

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 0.4 A, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= 20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

下载PDF

与BD243B相关器件

型号	品牌	获取价格	描述	数据表
BD243B/D	ETC	获取价格	Complementary Silicon Plastic Power Transistors
BD243B_07	ONSEMI	获取价格	Complementary Silicon Plastic Power Transistors
BD243B16	MOTOROLA	获取价格	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD243B16A	MOTOROLA	获取价格	6A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD243B-6200	RENESAS	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD243B-6203	RENESAS	获取价格	7A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD243B-6226	RENESAS	获取价格	7A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD243B-6255	RENESAS	获取价格	7A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD243B-6258	RENESAS	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD243B-6261	RENESAS	获取价格	7A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB

与BD243B相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

44
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

58

产品中心

服务支持

精选活动

关于我们

帮助中心

BD243B

BD243B 技术参数

BD243B 数据手册

与BD243B相关器件

与BD243B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BD243B

BD243B 技术参数

BD243B 数据手册

与BD243B相关器件

与BD243B相关文章

您还可以找

您在本页遇到什么问题？