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BD239B-S

更新时间： 2024-12-01 19:43:03
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网
页数 文件大小 规格书
4页 157K
描述
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3

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中文翻译

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BD239B-S 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.21
Base Number Matches：1

BD239B-S 数据手册

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BD239, BD239A, BD239B, BD239C  
NPN SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
BD240 Series  
TO-220 PACKAGE  
(TOP VIEW)  
30 W at 25°C Case Temperature  
2 A Continuous Collector Current  
4 A Peak Collector Current  
1
2
3
B
C
E
Customer-Specified Selections Available  
This series is OBSOLETE AND NOT  
recommended for new designs.  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD239  
55  
BD239A  
BD239B  
BD23
BD239  
70  
Collector-emitter voltage (RBE = 100 Ω)  
VCER  
V
90  
115  
45  
BD239A  
BD239B  
D239C  
60  
Collector-emitter voltage (IC = 30 mA)  
VCEO  
V
80  
100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
2
4
A
0.6  
A
Continuous device dissipation at (or bel25castemperature (see Note 2)  
Continuous device dissipation at (elo5°C e air temperature (see Note 3)  
Unclamped inductive load eny (sNot
Ptot  
Ptot  
30  
W
W
mJ  
°C  
°C  
°C  
2
½LIC  
32  
2
Operating junction temperaturnge  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,  
BE(off) = 0, RS = 0.1 Ω, VCC = 20 V.  
V
JUNE 1973 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1
1234

中文翻译

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BD239B-S 替代型号

型号 品牌 替代类型 描述 数据表
BD239BTU ONSEMI

功能相似

 NPN外延硅晶体管
BD239BTU FAIRCHILD

功能相似

 Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD239B FAIRCHILD

功能相似

 Medium Power Linear and Switching Applications

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BD239BT MOTOROLA

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 		2A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239BTU FAIRCHILD

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 		Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD239BTU ONSEMI

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 		NPN外延硅晶体管
BD239BU MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD239BU2 MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD239BUA MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD239BW MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD239BWD MOTOROLA

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 		2A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C ISC

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 		Silicon NPN Power Transistors
BD239C ONSEMI

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 		NPN外延硅晶体管

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