5秒后页面跳转
BD239C PDF预览

BD239C

更新时间: 2024-11-03 22:39:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
4页 35K
描述
NPN SILICON POWER TRANSISTOR

BD239C 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:8 weeks风险等级:1.03
最大集电极电流 (IC):2 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:30 W
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
VCEsat-Max:0.7 VBase Number Matches:1

BD239C 数据手册

 浏览型号BD239C的Datasheet PDF文件第2页浏览型号BD239C的Datasheet PDF文件第3页浏览型号BD239C的Datasheet PDF文件第4页 
BD239C  
NPN SILICON POWER TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
DESCRIPTION  
The BD239C is a silicon epitaxial-base NPN  
transistor in Jedec TO-220 plastic package.  
It is inteded for use in medium power linear and  
switching applications.  
3
2
1
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCER  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (RBE = 100)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
115  
V
V
100  
5
V
2
A
ICM  
Collector Peak Current  
4
A
IB  
Base Current  
0.6  
A
o
Ptot  
Ptot  
Tstg  
Tj  
30  
2
W
W
oC  
oC  
Total Dissipation at Tc 25 C  
o
Total Dissipation at Tamb 25 C  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/4  
April 1999  

BD239C 替代型号

型号 品牌 替代类型 描述 数据表
TIP29C STMICROELECTRONICS

类似代替

COMPLEMENTARY SILICON POWER TRANSISTORS
BD239CTU ONSEMI

功能相似

NPN外延硅晶体管
TIP29CTU FAIRCHILD

功能相似

Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

与BD239C相关器件

型号 品牌 获取价格 描述 数据表
BD239C_07 STMICROELECTRONICS

获取价格

NPN power transistor
BD239C16 MOTOROLA

获取价格

2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C16A MOTOROLA

获取价格

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6200 RENESAS

获取价格

4A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C-6203 RENESAS

获取价格

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6226 RENESAS

获取价格

4A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C-6255 RENESAS

获取价格

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6258 RENESAS

获取价格

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6261 RENESAS

获取价格

4A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C-6263 RENESAS

获取价格

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast