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BD237STU PDF预览

BD237STU

更新时间: 2024-11-30 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管功率双极晶体管
页数 文件大小 规格书
4页 64K
描述
2.0 A,100 V,25W,NPN 外延硅双极功率晶体管

BD237STU 技术参数

是否无铅: 不含铅生命周期:End Of Life
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95Factory Lead Time:1 week
风险等级:5.39最大集电极电流 (IC):2 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD237STU 数据手册

 浏览型号BD237STU的Datasheet PDF文件第2页浏览型号BD237STU的Datasheet PDF文件第3页浏览型号BD237STU的Datasheet PDF文件第4页 
BD237 (NPN), BD234 (PNP),  
BD238 (PNP)  
Preferred Devices  
Plastic Medium Power  
Bipolar Transistors  
Designed for use in 5.0 to 10 W audio amplifiers and drivers  
utilizing complementary or quasi complementary circuits.  
http://onsemi.com  
Features  
2.0 AMPERES  
POWER TRANSISTORS  
25 WATTS  
DC Current Gain −  
h
= 40 (Min) @ I = 0.15 Adc  
C
FE  
Epoxy Meets UL 94 V0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B; >8000 V  
Machine Model, C; >400 V  
Pb−Free Packages are Available*  
TO−225  
CASE 77  
STYLE 1  
MAXIMUM RATINGS  
3
2
1
BD237  
BD238  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
BD234  
45  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
W
MARKING DIAGRAM  
V
CEO  
V
CBO  
V
EBO  
80  
60  
100  
YWW  
BD23xG  
5.0  
2.0  
1.0  
25  
I
I
C
Base Current  
BD23x = Device Code  
x
Y
WW  
G
B
= 4, 7 or 8  
= Year  
= Work Week  
= Pb−Free Package  
Total Device Dissipation  
P
D
@ T = 25_C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
_C  
J
stg  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
Characteristic  
Device  
Package  
Shipping  
Symbol  
Max  
Unit  
BD234  
TO−225  
500 Units / Box  
500 Units / Box  
Thermal Resistance, Junction−to−Case  
R
5.0  
_C/W  
q
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BD234G  
TO−225  
(Pb−Free)  
BD237  
TO−225  
500 Units / Box  
500 Units / Box  
BD237G  
TO−225  
(Pb−Free)  
BD238  
TO−225  
500 Units / Box  
500 Units / Box  
BD238G  
TO−225  
(Pb−Free)  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 14  
BD237/D  

BD237STU 替代型号

型号 品牌 替代类型 描述 数据表
BD237G ONSEMI

类似代替

Plastic Medium Power Bipolar Transistors
BD237STU FAIRCHILD

功能相似

Medium Power Linear and Switching Applications
BD237 STMICROELECTRONICS

功能相似

COMPLEMENTARY SILICON POWER TRANSISTORS

与BD237STU相关器件

型号 品牌 获取价格 描述 数据表
BD238 ONSEMI

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Plastic Medium Power Bipolar Transistors
BD238 UTC

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-80V, PNP TRANSISTOR
BD238 FAIRCHILD

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Medium Power Linear and Switching
BD238 STMICROELECTRONICS

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COMPLEMENTARY SILICON POWER TRANSISTORS
BD238 ISC

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Silicon PNP Power Transistors
BD238 CJ

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TO-126
BD238 NJSEMI

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Trans GP BJT PNP 80V 2A 3-Pin TO-225 Bulk
BD238 CENTRAL

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80V,2A,25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switc
BD238 FOSHAN

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TO-126
BD238_15 UTC

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-80V, PNP TRANSISTOR