是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.16 | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 25 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 25 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | VCEsat-Max: | 0.6 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD238L-T60-K | UTC |
获取价格 |
-80V, PNP TRANSISTOR | |
BD238L-T6S-K | UTC |
获取价格 |
Power Bipolar Transistor | |
BD238S | FAIRCHILD |
获取价格 |
Medium Power Linear and Switching Applications | |
BD238STU | FAIRCHILD |
获取价格 |
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), | |
BD238STU | ONSEMI |
获取价格 |
Power 2 Amp 80 V PNP 25W Bipolar Junction Transistor, 1920-TUBE | |
BD239 | BOURNS |
获取价格 |
NPN SILICON POWER TRANSISTORS | |
BD239 | COMSET |
获取价格 |
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS | |
BD239 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
BD239 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
BD239 | POINN |
获取价格 |
NPN SILICON POWER TRANSISTORS |