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BD239A PDF预览

BD239A

更新时间: 2024-01-21 04:54:25
品牌 Logo 应用领域
COMSET 晶体开关晶体管局域网
页数 文件大小 规格书
3页 103K
描述
MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS

BD239A 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.22Is Samacsys:N
最大集电极电流 (IC):2 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN最大功率耗散 (Abs):30 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
Base Number Matches:1

BD239A 数据手册

 浏览型号BD239A的Datasheet PDF文件第2页浏览型号BD239A的Datasheet PDF文件第3页 
NPN BD239 – A – B – C  
MEDIUM POWER LINEAR AND SWITCHING  
APPLICATIONS.  
The BD239, A, B, C are mounted in Jedec TO-220 plastic package.  
They are the silicon epitaxial-base Power Transistors for use in medium power linear and  
switching applications.  
The PNP complements are BD240, A, B, C.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
BD239  
45  
60  
80  
100  
BD239A  
BD239B  
BD239C  
BD239  
Collector-Emitter Voltage  
V
55  
BD239A  
BD239B  
BD239C  
BD239  
BD239A  
BD239B  
BD239C  
70  
90  
115  
45  
60  
80  
100  
5.0  
VCER  
V
V
Collector-Emitter Voltage (RBE = 100 )  
VCBO  
Collector-Base Voltage  
Emitter-Base Voltage  
VEBO  
IC  
V
A
IC  
ICM  
3
7
0.5  
Collector Current  
IB  
Base Current  
A
@ Tamb = 25° C  
@ Tcase = 25° C  
30  
30  
W
W
PT  
Power Dissipation  
TJ  
TS  
Junction Temperature  
Storage Temperature  
150  
-65 to +150  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJ-amb  
RthJ-case  
Thermal Resistance, Junction-ambient  
Thermal Resistance, Junction-case  
70  
4.17  
°C/W  
°C/W  
22/10/2012  
COMSET SEMICONDUCTORS  
1/3  

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