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BD239A-6255 PDF预览

BD239A-6255

更新时间: 2024-01-13 12:13:43
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体管功率双极晶体管
页数 文件大小 规格书
2页 85K
描述
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

BD239A-6255 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.66外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:30 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzVCEsat-Max:0.7 V
Base Number Matches:1

BD239A-6255 数据手册

 浏览型号BD239A-6255的Datasheet PDF文件第2页 

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