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BD235_07 PDF预览

BD235_07

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
9页 259K
描述
NPN power transistors

BD235_07 数据手册

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BD235 BD237  
Electrical characteristics  
2
Electrical characteristics  
(T  
= 25°C; unless otherwise specified)  
case  
Table 3.  
Symbol  
Electrical characteristics  
Parameter  
Test Conditions  
Min. Typ. Max. Unit  
V
V
= rated V  
Collector cut-off current  
0.1  
2
mA  
mA  
CB  
CB  
CBO  
I
CBO  
EBO  
(I = 0)  
= rated V  
T = 150°C  
C
E
CBO  
Emitter cut-off current  
I
V
= 5V  
1
mA  
EB  
(I = 0)  
C
Collector-emitter  
sustaining voltage  
I = 100mA  
for BD235  
for BD237  
C
(1)  
60  
80  
V
V
V
CEO(sus)  
(I = 0)  
B
Collector-emitter  
saturation voltage  
(1)  
I = 1A __  
I = 0.1A  
B
0.6  
1.3  
V
V
V
C
CE(sat)  
(1)  
I = 1A ___  
V
= 2V  
CE  
Base-emitter voltage  
DC current gain  
V
C
BE  
I = 150mA _ V = 2V  
40  
25  
C
CE  
(1)  
h
FE  
I = 1A_  
V
= 2V  
C
CE  
1. Pulsed duration = 300 ms, duty cycle 1.5%.  
3/9  

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