Datasheet > BCX55

BCX55

更新时间： 2024-09-30 22:48:19

品牌	Logo	应用领域
CENTRAL		晶体晶体管放大器
页数	文件大小	规格书
2页	106K
描述
SURFACE MOUNT NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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BCX55 数据手册

BCX54

BCX55

BCX56

Central

Semiconductor Corp.

SURFACE MOUNT

DESCRIPTION:

NPN SILICON TRANSISTOR

The CENTRAL SEMICONDUCTOR BCX54,

BCX55, and BCX56 types are NPN Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for high current general

purpose amplifier applications.

SOT-89 CASE

MAXIMUM RATINGS (T =25°C)

BCX54

BCX55

BCX56

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

CBO

CEO

EBO

5.0

1.0

1.5

100

200

1.2

Peak Collector Current

Base Current

Peak Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

J stg

-65 to +150

104

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

=30V

100

CBO

EBO

=30V, T =125°C

=5.0V

100

I =100µA (BCX54)

CBO

CEO

CE(SAT)

BE(ON)

I =100µA (BCX55)

I =100µA (BCX56)

100

I =10mA (BCX54)

I =10mA (BCX55)

I =10mA (BCX56)

I =500mA, I =50mA

0.5

1.0

=2.0V, I =500mA

=2.0V, I =5.0mA

=2.0V, I =150mA

250

160

250

=2.0V, I =150mA

(BCX54-10, BCX55-10, BCX56-10)

=2.0V, I =150mA

CE C

(BCX54-16, BCX55-16, BCX56-16) 100

=2.0V, I =500mA

=5.0V, I =10mA, f=100MHz

130

MHz

R1 ( 18-December 2001)

中文翻译

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BCX55-10	CENTRAL	获取价格	SURFACE MOUNT NPN SILICON TRANSISTOR
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