5秒后页面跳转
BCX55-10 PDF预览

BCX55-10

更新时间: 2024-10-01 12:53:47
品牌 Logo 应用领域
TYSEMI 晶体晶体管放大器
页数 文件大小 规格书
2页 107K
描述
High current (max. 1 A). Low voltage (max. 80 V).Collector current IC 1 A

BCX55-10 数据手册

 浏览型号BCX55-10的Datasheet PDF文件第2页 
Transistors  
Product specification  
BCX54,BCX55,BCX56  
Features  
High current (max. 1 A).  
Low voltage (max. 80 V).  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VCBO  
Rating  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
BCX54  
45  
BCX55  
BCX56  
BCX54  
BCX55  
BCX56  
60  
V
100  
V
VCEO  
45  
V
60  
V
80  
V
Emitter-base voltage  
Collector current  
VEBO  
IC  
5
V
1
A
Peak collector current  
Peak base current  
ICM  
1.5  
0.2  
A
IBM  
A
Total power dissipation  
Storage temperature  
Junction temperature  
Operating ambient temperature  
Ptot  
1.3  
W
Tstg  
Tj  
-65 to +150  
150  
Ramb  
Rth(j-a)  
Rth(j-s)  
-65 to +150  
94  
Thermal resistance from junction to ambient  
Thermal resistance from junction to solder point  
K/W  
K/W  
14  
4008-318-123  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  

与BCX55-10相关器件

型号 品牌 获取价格 描述 数据表
BCX55-10,115 NXP

获取价格

60 V, 1 A NPN medium power transistor SOT-89 3-Pin
BCX55-10-BG ZETEX

获取价格

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX55-10BK CENTRAL

获取价格

Transistor
BCX55-10E6327 INFINEON

获取价格

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
BCX55-10E6433 INFINEON

获取价格

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
BCX55-10LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
BCX55-10-Q NEXPERIA

获取价格

60 V, 1 A NPN medium power transistorsProduction
BCX55-10T NEXPERIA

获取价格

60 V, 1 A NPN power bipolar transistorsProduction
BCX55-10T/R ETC

获取价格

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | SOT-89
BCX5510TA DIODES

获取价格

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89