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BCR183WE6327HTSA1 PDF预览

BCR183WE6327HTSA1

更新时间: 2024-11-25 14:47:59
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
12页 893K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3

BCR183WE6327HTSA1 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliant风险等级:5.67
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

BCR183WE6327HTSA1 数据手册

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BCR183...  
PNP Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R = 10 k, R = 10 k)  
1
2
BCR183S / U: Two internally isolated  
transistors with good matching  
in one multichip package  
BCR183S / U: For orientation in reel see  
package information below  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BCR183  
BCR183S  
BCR183U  
BCR183W  
C
C1  
B2  
E2  
3
6
5
4
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07173  
EHA07183  
Type  
BCR183  
BCR183S  
BCR183U  
BCR183W  
Marking  
Pin Configuration  
1=B 2=E 3=C  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74  
Package  
SOT23  
WMs  
WMs  
WMs  
WMs  
-
-
-
1=B 2=E 3=C  
-
-
-
SOT323  
2011-08-30  
1

BCR183WE6327HTSA1 替代型号

型号 品牌 替代类型 描述 数据表
PDTA114EU,135 NXP

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PDTA114E series - PNP resistor-equipped trans

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