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BCR185E6433 PDF预览

BCR185E6433

更新时间: 2024-11-25 14:47:59
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
11页 863K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

BCR185E6433 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.46其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):70
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

BCR185E6433 数据手册

 浏览型号BCR185E6433的Datasheet PDF文件第2页浏览型号BCR185E6433的Datasheet PDF文件第3页浏览型号BCR185E6433的Datasheet PDF文件第4页浏览型号BCR185E6433的Datasheet PDF文件第5页浏览型号BCR185E6433的Datasheet PDF文件第6页浏览型号BCR185E6433的Datasheet PDF文件第7页 
BCR185...  
PNP Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R = 10 k, R = 47 k)  
1
2
BCR185S: Two internally isolated  
transistors with good matching  
in one multichip package  
BCR185S: For orientation in reel see  
package information below  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BCR185/W  
BCR185S  
C
C1  
B2  
E2  
3
6
5
4
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07173  
EHA07183  
Type  
BCR185  
BCR185S  
BCR185W  
Marking  
Pin Configuration  
1=B 2=E 3=C  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
Package  
SOT23  
WNs  
WNs  
WNs  
-
-
-
1=B 2=E 3=C  
-
-
-
SOT323  
2011-08-30  
1

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