是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | End Of Life | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.46 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 4.7 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 70 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.2 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCR185F | INFINEON |
获取价格 |
PNP Silicon Digital Transistor | |
BCR185L3 | INFINEON |
获取价格 |
PNP Silicon Digital Transistor | |
BCR185S | INFINEON |
获取价格 |
PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driv | |
BCR185S-E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | |
BCR185S-E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | |
BCR185SQ62702C2588 | ETC |
获取价格 |
TRANSISTOR DIGITAL SOT363 | |
BCR185T | INFINEON |
获取价格 |
PNP Silicon Digital Transistor | |
BCR185U | INFINEON |
获取价格 |
PNP Silicon Digital Transistor Array | |
BCR185W | INFINEON |
获取价格 |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir | |
BCR185WE6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |