Datasheet > BCR135WQ62702C2287

BCR135WQ62702C2287

更新时间： 2024-11-20 23:34:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	39K
描述
TRANSISTOR DIGITAL SOT323

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数据手册

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BCR135WQ62702C2287 数据手册

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BCR 135W

NPN Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,

driver circuit

Ω

• Built in bias resistor (R =10k , R2=47K )

Type

Marking Ordering Code

WJs Q62702-C2287

Pin Configuration

Package

BCR 135W

1 = B

2 = E

3 = C

SOT-323

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Input on Voltage

CEO

CBO

EBO

i(on)

DC collector current

100

°C

Total power dissipation, T = 124°C

250

tot

Junction temperature

Storage temperature

150

- 65 ... + 150

stg

Thermal Resistance

≤

Junction ambient

240

K/W

thJA

Junction - soldering point

≤ 105

thJS

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm²Cu

Semiconductor Group

Nov-26-1996

12 3 4

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