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BCR141E6327HTSA1 PDF预览

BCR141E6327HTSA1

更新时间: 2024-11-21 14:37:39
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
11页 868K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,

BCR141E6327HTSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:4 weeks风险等级:6.3
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
Base Number Matches:1

BCR141E6327HTSA1 数据手册

 浏览型号BCR141E6327HTSA1的Datasheet PDF文件第2页浏览型号BCR141E6327HTSA1的Datasheet PDF文件第3页浏览型号BCR141E6327HTSA1的Datasheet PDF文件第4页浏览型号BCR141E6327HTSA1的Datasheet PDF文件第5页浏览型号BCR141E6327HTSA1的Datasheet PDF文件第6页浏览型号BCR141E6327HTSA1的Datasheet PDF文件第7页 
BCR141...  
NPN Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R =22k, R =22k)  
1
2
BCR141S : Two internally isolated  
transistors with good matching  
in one multichip package  
BCR141S: For orientation in reel see  
package information below  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BCR141  
BCR141S  
BCR141W  
C
C1  
6
B2  
5
E2  
4
3
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07174  
EHA07184  
Type  
BCR141  
BCR141S  
BCR141W  
Marking  
Pin Configuration  
1=B 2=E 3=C  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
Package  
SOT23  
WDs  
WDs  
WDs  
-
-
-
1=B 2=E 3=C  
-
-
-
SOT323  
2011-08-29  
1

BCR141E6327HTSA1 替代型号

型号 品牌 替代类型 描述 数据表
BCR141E6433HTMA1 INFINEON

类似代替

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
DDTC124TCA-7 DIODES

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