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BCR139T-E6327 PDF预览

BCR139T-E6327

更新时间: 2024-11-22 04:11:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 555K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon

BCR139T-E6327 数据手册

 浏览型号BCR139T-E6327的Datasheet PDF文件第2页浏览型号BCR139T-E6327的Datasheet PDF文件第3页浏览型号BCR139T-E6327的Datasheet PDF文件第4页浏览型号BCR139T-E6327的Datasheet PDF文件第5页浏览型号BCR139T-E6327的Datasheet PDF文件第6页浏览型号BCR139T-E6327的Datasheet PDF文件第7页 
BCR139...  
NPN Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R =22 k)  
1
BCR139F/L3  
BCR139T  
C
3
R1  
1
2
B
E
EHA07264  
Type  
Marking  
WYs  
WY  
Pin Configuration  
Package  
TSFP-3  
TSLP-3-4  
SC75  
BCR139F  
BCR139L3  
BCR139T  
1=B 2=E 3=C  
1=B 2=E 3=C  
1=B 2=E 3=C  
-
-
-
-
-
-
-
-
-
WYs  
Maximum Ratings  
Parameter  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Input on voltage  
Symbol  
Value  
50  
50  
Unit  
V
V
V
V
V
CEO  
CBO  
EBO  
i(on)  
5
30  
100  
mA  
Collector current  
I
C
mW  
Total power dissipation-  
P
tot  
BCR139F, T 128°C  
250  
250  
250  
S
BCR139L3, T 135°C  
S
BCR139T, T 109°C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Mar-03-2005  
1

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