Datasheet > BCP56-10/DG/B2,115

BCP56-10/DG/B2,115

更新时间： 2024-11-23 21:12:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
22页	1121K
描述
80 V, 1 A NPN medium power transistors, SOT223 Package, Standard Marking, Reel Pack, SMD, 7"

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BCP56-10/DG/B2,115 技术参数

Source Url Status Check Date：	2013-10-15 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	5.59	Base Number Matches：	1

BCP56-10/DG/B2,115 数据手册

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BCP56; BCX56; BC56PA

80 V, 1 A NPN medium power transistors

Rev. 9 — 25 October 2011

Product data sheet

1. Product profile

1.1 General description

NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.

Table 1. Product overview

Type number^[1]

Package

NXP

PNP complement

JEITA

SC-73

SC-62

JEDEC

BCP56

BCX56

BC56PA

SOT223

SOT89

SOT1061

BCP53

BCX53

BC53PA

TO-243

[1] Valid for all available selection groups.

1.2 Features and benefits

 High current

 Three current gain selections

 High power dissipation capability

 Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)

 Leadless very small SMD plastic package with medium power capability (SOT1061)

 AEC-Q101 qualified

1.3 Applications

 Linear voltage regulators

 Power management

 MOSFET drivers

 Amplifiers

 Low-side switches

 Battery-driven devices

1.4 Quick reference data

Table 2.

Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

I_C

collector-emitter voltage open base

collector current

I_CM

h_FE

peak collector current

DC current gain

single pulse; t_p 1 ms

[1]

V_CE= 2 V; I_C= 150 mA

100

250

160

250

h_FEselection -10

h_FEselection -16

[1] Pulse test: t_p 300 s;  = 0.02.

12 3 4 5 6 7...22

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