BCP56-10TA

更新时间： 2024-11-26 13:00:51

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数据手册

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BCP56-10TA 数据手册

SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

BCP56

ISSUE 3 AUGUST 1995

✪

FEATURES

Suitable for AF drivers and output stages

High collector current and Low V_CE(sat)

COMPLEMENTARY TYPE BCP53

PARTMARKING DETAILS BCP56

BCP56 10

BCP56 16

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

100

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

1.5

Continuous Collector Current

Power Dissipation at T_amb=25°C

I_C

P_tot

°C

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

V_(BR)CBO100

TYP.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=100µA

I_C= 10mA *

I_E=10µA

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

100

µA

V_CB=30V

V_CB=30V, T_amb=150°C

Emitter Cut-Off Current I_EBO

V_EB=5V

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

0.5

I_C=500mA, I_B=50mA*

Base-Emitter Turn-On V_BE(on)

Voltage

1.0

I_C=500mA, V_CE=2V*

Static Forward Current h_FE

Transfer Ratio

250

I_C=150mA, V_CE=2V*

I_C=500mA, V_CE=2V*

I_C=150mA, V_CE=2V*

BCP56-10 63

BCP56-16 100

100

160

250

Transition Frequency

f_T

125

MHz

I_C=50mA, V_CE=10V,

f=100MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

3 - 18

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