Datasheet > BCP53-10T1

BCP53-10T1

更新时间： 2024-11-11 23:34:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	52K
描述
TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1.5A I(C) \| SOT-223

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中文翻译

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数据手册

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BCP53-10T1 数据手册

BCP53T1 Series

Preferred Devices

PNP Silicon

Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio

amplifier applications. The device is housed in the SOT-223 package

which is designed for medium power surface mount applications.

http://onsemi.com

• High Current: 1.5 Amps

• NPN Complement is BCP56

MEDIUM POWER

HIGH CURRENT

SURFACE MOUNT

PNP TRANSISTORS

• The SOT-223 Package can be soldered using wave or reflow. The

formed leads absorb thermal stress during soldering, eliminating the

possibility of damage to the die

• Available in 12 mm Tape and Reel

Use BCP53T1 to order the 7 inch/1000 unit reel.

Use BCP53T3 to order the 13 inch/4000 unit reel.

COLLECTOR 2,4

• Device Marking:

BCP53T1 = AH

BCP53–10T1 = AH–10

BCP53–16T1 = AH–16

BASE

EMITTER 3

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

Value

–80

Unit

Vdc

Adc

CEO

CBO

EBO

MARKING DIAGRAM

–100

–5.0

1.5

AHxxx

SOT–223

CASE 318E

STYLE 1

Total Power Dissipation

@ T = 25°C (Note 1.)

1.5

Watts

mW/°C

AHxxx = Device Code

Derate above 25°C

xxx

= –10 or –16

Operating and Storage

Temperature Range

T , T

–65 to

+150

°C

stg

ORDERING INFORMATION

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Device

Package

SOT–223

Shipping

Thermal Resistance,

Junction to Ambient

(surface mounted)

83.3

°C/W

θJA

BCP53T1

1000/Tape & Reel

BCP53–10T1

BCP53–16T1

Lead Temperature for Soldering,

0.0625″ from case

Time in Solder Bath

260

°C

Sec

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

November, 2000 – Rev. 2

BCP53T1/D

12 3 4

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与BCP53-10T1相关器件

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BCP53-10T1G	ONSEMI	获取价格	PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT
BCP53-10T3	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1.5A I(C) \| SOT-223
BCP5310TA	DIODES	获取价格	PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
BCP53-10TA	ZETEX	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BCP53-10TA	DIODES	获取价格	1A, 80V, PNP, Si, POWER TRANSISTOR
BCP53-10-TAPE-13	NXP	获取价格	1A, 80V, PNP, Si, POWER TRANSISTOR
BCP53-10-TAPE-7	NXP	获取价格	1A, 80V, PNP, Si, POWER TRANSISTOR
BCP53-10TC	DIODES	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BCP53-10TF	ETC	获取价格	BCP53-10T/SOT223/SC-73
BCP53-10T-Q	NEXPERIA	获取价格	80 V, 1 A PNP medium power transistorsProduction