生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.39 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 63 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | COMMERCIAL |
表面贴装: | YES | 端子面层: | NOT SPECIFIED |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 125 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP52-10T | NEXPERIA |
获取价格 |
60 V, 1 A PNP medium power transistorsProduction | |
BCP5210TA | DIODES |
获取价格 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 | |
BCP52-10TA | DIODES |
获取价格 |
1A, 60V, PNP, Si, POWER TRANSISTOR | |
BCP52-10-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP52-10-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP52-10TC | ZETEX |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BCP5216 | DIODES |
获取价格 |
PNP, 60V, 1A, SOT223 | |
BCP5216 | STMICROELECTRONICS |
获取价格 |
LOW POWER PNP TRANSISTOR | |
BCP52-16 | INFINEON |
获取价格 |
PNP Silicon AF Transistors (For AF driver and output stages High collector current) | |
BCP52-16 | NEXPERIA |
获取价格 |
60 V, 1 A PNP medium power transistorProduction |