是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.14 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | NOT SPECIFIED | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
认证状态: | COMMERCIAL | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 125 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP5216E6327HTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMP | |
BCP52-16E6327XT | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-223, | |
BCP52-16E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | |
BCP5216H6327XTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMP | |
BCP52-16T | NEXPERIA |
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60 V, 1 A PNP medium power transistorsProduction | |
BCP5216TA | DIODES |
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PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 | |
BCP52-16TA | ZETEX |
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Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BCP52-16-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP52-16-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP52-16TC | ZETEX |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 |