Nexperia
BCP51-Q series
45 V, 1 A PNP medium power transistors
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
ICBO
collector-base
cut-off current
VCB = -30 V; IE = 0 A
Tamb = 25 °C
-
-
-100 nA
VCB = -30 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-10
µA
IEBO
hFE
emitter-base
cut-off current
VEB = -5 V; IC = 0 A
Tamb = 25 °C
-100 nA
DC current gain
BCP51-Q
VCE = -2 V; IC = -5 mA
Tamb = 25 °C
[1] 63
-
-
VCE = -2 V; IC = -150 mA
Tamb = 25 °C
63
40
-
250
VCE = -2 V; IC = -500 mA
Tamb = 25 °C
-
-
BCP51-10-Q
BCP51-16-Q
VCE = -2 V; IC = -5 mA
Tamb = 25 °C
[1] 63
63
-
-
VCE = -2 V; IC = -150 mA
Tamb = 25 °C
-
160
VCE = -2 V; IC = -500 mA
Tamb = 25 °C
40
-
-
VCE = -2 V; IC = -5 mA
Tamb = 25 °C
[1] 63
-
-
VCE = -2 V; IC = -150 mA
Tamb = 25 °C
100
-
250
-
VCE = -2 V; IC = -500 mA
Tamb = 25 °C
40
-
-
VCEsat
VBE
Cc
collector-emitter
saturation voltage
IC = -500 mA; IB = -50 mA
Tamb = 25 °C
[1]
[1]
-
-0.5
V
base-emitter voltage
collector capacitance
transition frequency
VCE = -2 V; IC = -500 mA
Tamb = 25 °C
-
-
-1
-
V
VCB = -10 V; IE = ie = 0 A; f = 1 MHz
Tamb = 25 °C
-
15
145
pF
MHz
fT
VCE = -5 V; IC = -50 mA; f = 100 MHz
Tamb = 25 °C
-
-
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02
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BCP51-Q_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
Rev. 1 — 16 October 2023
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