Datasheet > BCP51-Q

BCP51-Q

更新时间： 2024-03-03 10:10:25

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	242K
描述
45 V, 1 A PNP medium power transistorsProduction

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BCP51-Q 数据手册

Nexperia

BCP51-Q series

45 V, 1 A PNP medium power transistors

9. Thermal characteristics

Table 6. Thermal characteristics

T_amb= 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

192

125

Unit

K/W

R_th(j-a)

thermal resistance from junction to ambient

in free air

[1]

[2]

[3]

R_(j-sp)

thermal resistance from junction to solder point

[1] Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm².

[3] Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm².

006aac677

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

- 1

- 5

- 4

- 3

- 2

- 1

(s)

FR4 PCB; single-sided copper; tin-plated and standard footprint

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aac678

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

- 1

- 5

- 4

- 3

- 2

- 1

(s)

FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm²

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BCP51-Q_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 16 October 2023

4 / 12

1 2 345 6 7...12

下载PDF

与BCP51-Q相关器件

型号	品牌	描述	获取价格	数据表
BCP51Q-AH	SWST	功率三极管	获取价格
BCP51Q-HAF	SWST	功率三极管	获取价格
BCP51T	NEXPERIA	45 V, 1 A PNP medium power transistorsProduction	获取价格
BCP51-T	NXP	TRANSISTOR Si, POWER TRANSISTOR, BIP General Purpose Power	获取价格
BCP51T/R	ETC	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 1A I(C) \| SOT-223	获取价格
BCP51TA	DIODES	PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223	获取价格