Datasheet > BC869-16

BC869-16

更新时间： 2024-01-19 22:09:17

品牌	Logo	应用领域
安世 - NEXPERIA		放大器晶体管
页数	文件大小	规格书
24页	1108K
描述
20 V, 2 A PNP medium power transistorProduction

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技术参数
数据手册

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BC869-16 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.66
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

BC869-16 数据手册

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

Rev. 7 — 12 October 2011

Product data sheet

1. Product profile

1.1 General description

PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.

Table 1. Product overview

Type number^[1]

Package

Nexperia

SOT223

SOT89

NPN complement

JEITA

SC-73

SC-62

JEDEC

BCP69

BC869

BC69PA

BCP68

BC868

BC68PA

TO-243

SOT1061

[1] Valid for all available selection groups.

1.2 Features and benefits

 High current

 Three current gain selections

 High power dissipation capability

 Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)

 Leadless very small SMD plastic package with medium power capability (SOT1061)

 AEC-Q101 qualified

1.3 Applications

 Linear voltage regulators

 Power management

 MOSFET drivers

 Amplifiers

 High-side switches

 Battery-driven devices

1.4 Quick reference data

Table 2.

Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

20

2

Unit

V_CEO

I_C

collector-emitter voltage open base

collector current

I_CM

peak collector current

single pulse; t_p 1 ms

3

12 3 4 5 6 7...24

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